Microélectronique Silicium:
Le transistor à base métallique
Le transistor à base perméable
5. E. Rosencher, A. Straboni, S.
Rigo and G. Amsel :
ppl. Phys. Lett. 34, 254
(1979): "A 180 study of the
thermal oxidation of silicon in oxygen".
7. E. Rosencher :
Solid State Comm. 38, 1293
(1981): "A displaced Maxwellian approach to ballistic electron transport in
silicon".
8. E. Rosencher :
Journal de Physique 42, C7-351 (1981).
"Ballistic transport in semiconductors : a displaced
Maxwellian formulation".
9. E. Rosencher and D. Bois :
Appl. Phys. Lett. 40, 601
(1982). Change of interface state spectrum in Al/Si02/Si
structures with biasing during electron irradiation".
10. E. Rosencher and D. Bois :
Electronics Lett. 18 545
(1982). "Comparison of interface state spectrum in MIS structure deduced from
DLTS and Terman measurements".
11. E. Rosencher, V. Mosser and
G. Vincent :
Solid State Comm. 45, 629
(1983). "Ionization transient of shallow levels in silicon space charge layer at
low temperature".
13. E. Rosencher, V. Mosser and G. Vincent :
Phys. Rev. 29, 1135 (1984).
"Transient-current study of field-assisted emission from shallow levels in
silicon".
14. E. Rosencher and R. Coppard
:
J. Appl. Phys. 55, 971 (1984).
"Transient capacitance spectroscopy of Na+ -induced
surface states at the Si/SiO2 interface".
15. E. Rosencher and R. Coppard :
J. Physique Lett. 45, L-493 (1984).
"Dipolar relaxation effects in Al/SiO2/Si
structures investigated by transient capacitance spectroscopy".
16. E. Rosencher,
S. Delage, Y. Campidelli and F. Arnaud d'Avitaya :
Electronics Lett. 20, 762
(1984). "Transistor effect in monolithic Si/CoSi2/Si
epitaxial structures".
17. E. Rosencher,
S. Delage and F. Arnaud d'Avitaya :
J. Vac. Sci. Technol. B3,
762 (1985). "Transient capacitance study of epitaxial Co2/Si
<111> Schottky barriers".
18. F. Arnaud d'Avitaya,
S. Delage, E. Rosencher and J. Derrien :
J. Vac. Sci. Technol. B3, 770
(1985). "Kinetics of formation and properties of epitaxial CoSi2
films on Si <111>".
19. E. Rosencher, R. Coppard and
D. Bois :
J. Appl. Phys. 57, 2823 (1985).
"Probing of impurity potential well at the Si/SiO2 interface
by electric-field enhanced emission".
21. O. Thomas, J.P. Senateur, R.
Madar, O. Laborde and E. Rosencher :
Solid State Comm. 55, 629
(1985). "Molybdenum disilicide : crystal growth, thermal expension and
resistivity".
22. F. Arnaud d'Avitaya, S.
Delage and E. Rosencher :
Surface Science 168, 483 (1986).
"Silicon MBE : recent developments".
23. P.A. Badoz, A. Briggs,
E. Rosencher and F. Arnaud s'Avitaya :
J. Physique Lett. 46, 979
(1985). "Superconductivity in ultra-thin CoSi2 epitaxial
films".
25. E. Rosencher, S. Delage, F.
Arnaud d'Avitaya, C. d'Anterroches, K. Belhadded and J.C. Pfister :
Physica 134B, 106 (1985), "Realisation
and electrical properties of a monolithic base transistor : the SiCoSi2/Si
structure".
26. J.C. Pfister, E. Rosencher,
K. Belhaddad and A. Poncet :
Solid State Electronics 29, 907
(1986). "Electrical influence of pinholes in metal base transistors".
27. E. Rosencher, P.A. Badoz,
J.C. Pfister, F. Arnaud d'Avitaya, G. Vincent and S. Delage :
Appl. Phys.
Lett. 49, 271 (1986). "Study of ballistic transport in SiCoSi2/Si
metal base transistors".
28. S. Delage, P.A. Badoz,
E. Rosencher and F. Arnaud d'Avitaya :
Electronics Letters 22, 207
(1986). "Electrical characterisation of epitaxially overgrown Si in Si <111>
/CoSi2/Si metal base
transistor".
32. E. Rosencher, G. Glastre, G.
Vincent, A. Vareille and F. Arnaud d'Avitaya :
Electronics Letters 22, 699
(1986). "Si/CoSi2/Si
permeable base transistor obtained by silicon molecular beam epitaxy over a CoSi2 grating".
35. P.A. Badoz,
E. Rosencher, A. Briggs and F. Arnaud d'Avitaya :
Superlattices, Microstructures and
Microdevices, 2, 425 (1987). "Parallel and perpendicular transport in Si/CoSi2 and
Si/CoSi2/Si heterostructures".
36. F. Arnaud d'Avitaya, J.A.
Chroboczek, G. Glastre, Y. Campidelli and E. Rosencher :
Journal of Crystal Growth 81,
463 (1987). "Silicon overgrowth on CoSi2/Si
<111> epitaxial structures : application to permeable base transistor".
37. G. Glastre, G. Vincent, A. Vareille, C.
Puissant, P. Normandon and E. Rosencher :
Microelectronic Engineering, 7,
1 (1987): “ Submicron PMMA/W/SiO2 lithography
for Si localized epitaxy”.
38. P.A. Badoz, E. Rosencher, J.
Torres and G. Fishman :
J. Appl. Phys. 62, 890 (1987).
"Insulating, metallic or semi-metallic electronic nature of XSi2 coumpounds
: application to WSi2".
39. P.A. Badoz, A. Briggs, E.
Rosencher, F. Arnaud d'Avaitaya and C. d'Anterroches :
Appl. Phys. Lett. 51, 169
(1987). "Low temperature transport properties of ultra-thin CoSi2 epitaxial
films".
41. G. Marrakchi, E. Rosencher,
G. Guillot, A. Nouailhat :
Rev. Phys. Appl. 22, 1451
(1987). "Propriété de défauts de surface produits par recuit laser continu sur GaAs".
42. G. Marrakchi, E. Rosencher,
F. Guillot and A. Nouilhat :
Appl. Phys. Lett. 54, 540
(1989). "Electric Field Assisted Emission, from Au/GaAs interface states".
59: G. Glastre, E. Rosencher, F. Arnaud d'Avitaya,
C. Puissant,M. Pons, G. Vincent and J.C. Pfister
Appl. Phys. Lett. 52, 898 (1988)
:" CoSi2 and Si epitaxial
growth in <111> Si submicron lines with application to a permeable base
transistor"
47. A. Guivarc'h, M. Secoué, B.
Guenais, Y. Ballini, P.A. Badoz and E. Rosencher
J. Appl. Phys. 64, 683 (1988) :
" Growth of aRh2As on
GaAs(001) in a molecular-beam epitaxy system".
48. J.Y. Duboz, P.A. Badoz,E.
Rosencher, J. Henz, M. Ospelt, H. von Känel and A. Briggs
Appl. Phys. Lett. 53, 788 (1988)
: "Electrical transport properties in epitaxial codeposited CoSi2 layers
on (111) Si"
52. J.Y. Duboz, P.A. Badoz, F.
Arnaud d' Avitaya and E. Rosencher
Phys. Rev. B 40, 10607 (1989) :
"Evidence for Fermi-level pinning relative to either valence or conduction band
in Schottky barriers".
53. D. Vuillaume, M. Lannoo, J.C.
Bourgoin and E. Rosencher
J. Appl. Phys. 66, 5920 (1989) :
"Temperature formation of the inversion layer in metal-oxyde-semiconductor
structures: Theoretical model and determination of minority-capture cross
sections of the gold acceptor level in silicon".
54. P. Letourneau, G. Vincent, P. Perret, P.A. Badoz and E. Rosencher
IEEE Electron Device Lett 10,
550 (1989) :" Si permeable base transistor realization using a MOS-compatible
technology".
55. J. Y. Duboz, P.A. Badoz, F.
Arnaud d'Avitaya and E. Rosencher
J. Electron. Mat. 19, 101 (1989)
: "Temperature dependence of Schottky barriers height on Si: Experimental
evidence for Fermi Energy pinning relative to either valence or conduction
band".
Détecteurs Infrarouge à
Puits Quantiques
QWIP
51. E. Rosencher, N. Vodjdani, J.
Nagle, P. Bois, E. Costard and S Delaitre
Appl. Phys. Lett 55, 1853 (1989)
: "Photocapacitance spectroscopy of GaAs/AlGaAs multiquantum wells"
58. E. Martinet, E. Rosencher, F. Chevoir , J. Nagle and P. Bois
Phys. Rev. B 44, 3157 (1991) :
"Direct determination of electron tunneling escape time from a GaAs/AlGaAs
quantum well by transient capacitance spectroscopy"
64. E. Rosencher, E. Martinet, E.
Böckenhoff, Ph. Bois, S. Delaitre and J. P. Hirtz
Appl. Phys. Lett. 58, 2589
(1991) : "A normal incidence infrared detector based on parallel intraband
photoconductivity in GaAs/AlGaAs multiquantum wells."
69. E. Rosencher, E. Martinet, F.
Luc, Ph. Bois and E. Böckenhoff
Appl. Phys. Lett. 59, 3255
(1991): " Discrepencies between photocurrent and absorption spectroscopies in
intersubband photoionization from GaAs/AlGaAs multiquantum wells"
70. E. Martinet, F. Luc, E.
Rosencher, and S. Delaitre
Appl. Phys. Lett. 60, 895
(1992): “ Electri(cal tunability of infrared detectors using compositionally
asymmetric GaAs/AlGaAs multiquantum wells”
72. E. Rosencher, F. Luc, P. Bois and S. Delaitre
Appl. Phys. Lett. 61 , 468
(1992) : “Injection mechanism at contacts in a quantum-well intersubband
infrared detector”
73. E. Martinet, E. Rosencher,
, F. Luc, P. Bois, E. Costard, and S. Delaitre
Appl. Phys. Lett. 61 , 246
(1992) :” Switchable bicolor (5.5-9.0 µm) infrared detector using asymmetric
GaAs/AlGaAs multiquantum well”
76. V. Berger, E. Rosencher, N.
Vodjdani and E. Costard
Appl. Phys. Lett. 62, 378 (1993)
: “Quantum well infrared photodetection induced by interband pumping”
77. F. Luc, E. Rosencher and B.
Vinter
Appl. Phys. Lett. 62, 1143
(1993) : “ Determination of electron recombination parameters in GaAs/ AlGaAs
quantum well by impedance spectroscopy”
78. F. Luc, E. Rosencher and P.
Bois
Appl. Phys. Lett. 62, 2542
(1993) : “ Intersubband optical transients in multiquantum well structures”
79. J. Y. Duboz, E. Rosencher and
N. Laurent
IEEE J. Quantum Electron. QE30,
1507 (1994): “Monolithic Spectrometer based on intersubband transitions in
quantum wells”
81. E. Rosencher, F. Luc, P. Bois
and Y. Cordier
Appl. Phys. Lett. 63 , 3312
(1993) : “Capture Time vs Barrier Thickness in Quantum Well Structures Measured
by Infrared Photoconductive Gain”
82. B. Vinter, F. Luc, P. Bois,
L. Thibaudeau and E. Rosencher
Solid State Electron. ??????“Capture and Emission of Electrons in
Quantum Wells under Applied Electric Field"
85. S.L. Feng, J. Krynicki, M. Zazoui, J.C.
Bourgoin, P. Bois and E. Rosencher
J. Appl. Phys. 74, 341 (1993) :”
Electron Transport through GaAlAs barriers in GaAs”
87. A. Fiore, E. Rosencher, P.
Bois, J. Nagle and N. Laurent
Appl. Phys. Lett. 64, 478
(1994): “Strained InGaAs / AlGaAs Quantum Well Infrared Detectors at 4. 5
µm”
88.
E. Rosencher, B. Vinter, F. Luc, L.Thibaudeau, P. Bois and J. Nagle
IEEE J. Quantum Electron. QE30,
2875 (1994) : “ Emission and Capture of Electrons in Multiquantum well
structures”
94. J.Y. Duboz, E. Costard, E.
Rosencher, P. Bois, J.M. Berset, D. Jaroszynski , J.M. Ortega
J. Appl. Phys.77, 6492 (1995):
“Electron Relaxation Time Measurements in GaAs/AlGaAs quantum wells”
146 E. Rosencher
C.R.A.S to be published (2004):
"Physical frontiers in infrared photodetectors"
153
J. Le Rouzo, I. Ribet-Mohamed, N. Guérineau, R. Haïdar, M. Tauvy, E. Rosencher
and S.L. Chuang
Appl. Phys.
Lett.
88,
091117 (2006):” Van Hove singularities in intersubband transitions in
multiquantum well photodetectors”
154 E. Rosencher and R.
Haidar
Applied Optics (submitted):
“Are microcavities of any help for thermal infared light detection”
Détecteurs UV à base de III-N
103 F. Binet, J.Y. Duboz, E. Rosencher, F. Scholz and V. Härle
Phys. Rev. B 54, 1 (1996) : “Electric field effects on excitons in
Gallium Nitride”
104 F. Binet, J.Y. Duboz, E.
Rosencher, F. Scholz and V. Härle
Appl. Phys. Lett. 69, 1202 (1996): “Mechanisms of recombination
in GaN photodetectors”
108 F. Binet, J.Y. Duboz, N.
Laurent, E. Rosencher and O. Briot
J. Appl. Phys. 81, 6449 (1997):
”Properties of photovoltaic detector based on a n-type GaN Schottky barrier”
115
J.Y.
Duboz, F. Binet, E. Rosencher, F. Scholz and V. Härle
Material
Science and Engineering B43, 269 ( 1997): "Electric field effects on
excitons in gallium nitride"
151
J.S. Lauret,_ R. Arenal de la Concha, A. Loiseau, M. Cau, B. Attal-Tretout, and
E. Rosencher
Phys. Rev. Lett. 94, 037405
(2005) : “ Optical transitions in Single Wall Boron Nitride Nanotubes”
158
M. Silly, P.
Jaffrennou,J. Barjon, JF. Ducastelle, A. Loiseau, B. Attal-Trettout and E. Rosencher
Phys. Rev. B
(submitted, 2007) : « Luminescence properties of hexagonal boron
nitride”
Optique Non Linéaire
dans les hétérostructures Semiconductrices
49. E. Rosencher, P. Bois, J. Nagle and S. Delaitre
Electronics Lett. 25, 1063
(1989) : " Second harmonic generation by intersubband transitions in
compositionally asymmetrical MQWs"
50. E. Rosencher, P. Bois, J.
Nagle, E. Costard and S. Delaitre
Appl. Phys. Lett. 55 ,1597
(1989) : "Observation of nonlinear optical rectification at 10.6 µm in
compositionally asymmetrical AlGaAs multiquantum wells"
56. E. Rosencher, P. Bois, B.
Vinter, J. Nagle and D. Kaplan
Appl. Phys. Lett. 56, 1824
(1990): " Giant nonlinear optical rectification at 8-12 µm in asymmetrical
coupled quantum wells "
57. P. Boucaud, F.Julien, D.D.
Yang, J-M Lourtioz, E. Rosencher, P. Bois and J. Nagle
Appl. Phys. Lett. 57, 215
(1990): " A detailed analysis of second harmonic generation near 10.6 µm in GaAs/AlGaAs
asymmetrical quantum wells"
63.P. Bois, E. Rosencher, J.
Nagle, E. Martinet, P. Boucaud, F.H. Julien, D.D. Yang and J-M. Lourtioz:
Superlattices and Microstructures 8,
369 (1990): " Compositionally asymmetrical multiquantum wells:
"pseudo-molecules" for giant optical nonlinearities in the infrared (9 -11 µm)
"
66.
P. Boucault, F.H. Julien, D.D. Yang, J.M. Lourtioz, E. Rosencher and Ph.
Bois
Optics Letters 16, 199 ( 1991):
"Saturation of second harmonic generation in GaAs/AlGaAs asymmetric quantum
wells"
67. E. Rosencher and Ph. Bois
Phys. Rev. B 44, 11315 (1991)
:" Model system for optical nonlinearities: asymmetric quantum wells"
75. E. Rosencher
J. Appl. Phys. 73, 1909 (1993)
:” Two photon optical nonlinearities in a resonant quantum well system”
89. E. Rosencher, B. Vinter, V.
Berger and N. Laurent
Nonlinear Optics 11, 115 (1995)
: “ Two-photon absorption due to resonant inter -intraband transitions in
asymmetric quantum well”
92. A. Fiore, E. Rosencher, B. Vinter,
D. Weil and V. Berger
Physical
Review B 51,13192 ( 1995): “ Second Order Optical Susceptibility of Biased
Quantum Wells in the interband regime”
93. H.C. Liu, E. Costard, E. Rosencher and J. Nagle
IEEE J. Quantum Electron.
QE31,1659 (1995): “Sum
Frequency Generation by Intersubband Transitions in Step Quantum Wells”
95. E. Rosencher, B. Vinter and
V. Berger:
J. Appl. Phys.78, 6042 (1995): “
Second harmonic generation in non-birefringent semiconductor microcavities”
97. E. Rosencher ,A. Fiore, B.
Vinter, V. Berger, Ph. Bois and J. Nagle
Science 271,168 (1995): “
Quantum Engineering of Optical Nonlinearities”
98. A. Fiore , E. Rosencher, V.
Berger and J. Nagle:
Appl. Phys. Lett. 67, 3765 (1995): “
Electric field induced interband second harmonic generation in GaAs/AlGaAs
quantum wells”
99 J. B. Khurgin and E. Rosencher
IEEE J. Quantum Electron.
QE32, 1882-1896 (1996):
“Practical aspects of lasing without inversion in various media ”
100 A. Fiore, V. Berger, E.
Rosencher, N. Laurent, S. Theilmann, N. Vodjdani and J. Nagle
Appl. Phys. Lett. 68, 1320
(1996) :” Huge Birefringence in Selectively Oxidized GaAs/AlGaAs Optical
Waveguides”
101 J. B. Khurgin and E. Rosencher
J. Opt. Soc. Am.B 14, 1249 (1997)
“Practical aspects of optically coupled inversionless lasers”
110 J.C. Garcia, E. Rosencher,
Ph. Collot, N. Laurent, J.L. Guyaux, B. Vinter and J. Nagle
Appl. Phys. Lett. 71, 3752
(1997): “Epitaxially stacked lasers using Esaki junctions: a bipolar cascade
laser”
102 J. B. Khurgin and E. Rosencher
Phys. Rev. A 54, 2451-4
(1996):” Balance equations and threshold conditions for the inversionless laser
in an autoionizing system”
106 H.C. Liu, Jianmeng Li, E.
Costard, E. Rosencher and J. Nagle
Solid-State Electronics 40,567
(1996):” Sum Frequency Generation by Intersubband Transition in Step Quantum
Well”
107 A. Fiore, V. Berger, E.
Rosencher, N. Laurent, N. Vodjdani and J. Nagle
Jour. Non Lin. Opt. Phys. And Mat.
5,645 (1996): “Birefringence phase matching in selectively oxidized GaAs/AlAs
optical waveguides for nonlinear frequency conversion”
109 A. Fiore, V. Berger, E.
Rosencher, S. Crouzy, N. Laurent and J. Nagle
Appl. Phys. Lett. 71, 2587
(1997): “ Dn =
0.22 birefringence measurement by surface emitting second harmonic generation in
selectively oxidized GaAs/AlAs optical waveguide”
111 J.P. Landesman, A. Fiore, V.
Berger, E. Rosencher, J. Nagle and P. Puech
Appl. Phys. Lett. 71, 2520
(1997): “Local stress measurements in laterally oxidized GaAs/AlGaAs
heterostructures by micro-Raman spectroscopy”
112 A. Fiore, V. Berger, E.
Rosencher, P. Bravetti, N. Laurent and J. Nagle
Appl. Phys. Lett. 71, 3622
(1997) “ Mid-infrared generation by difference frequency conversion in GaAs
based waveguides”
113. A. Fiore, V. Berger, E.
Rosencher, P. Bravetti and J. Nagle
Nature 391, 463 (1998): “Phase
matching using an isotropic nonlinear material”
114.P. Bravetti ,
A. Fiore, V. Berger, E. Rosencher, J. Nagle and O. Gauthier-Lafaye
Optics Lett. 23, 331 (1998) :
“5.2 - 5.6 µm tunable source by frequency conversion in a GaAs based waveguide”
116
J. Khurgin, E. Rosencher
and Y.J. Ding
JOSA B 15, 1726 (1998):
"Analysis of all semiconductor intra-cavity OPO"
117 A. Fiore, S. Janz, L.
Delobel, P. Van der Meer, P. Bravetti, V. Berger, E. Rosencher and J. Nagle
Appl. Phys. Lett. 72, 2942
(1998): "Second harmonic generation at 1.6 µm in GaAs based waveguides using
birefringence phase-matching"
118
A. Fiore, V. Berger, E. Rosencher, P. Bravetti and J. Nagle
Optics in 97
in Optics and Photonics News 8, 27 (1997): "Tunable Mid-Infrared Sources by
difference frequency generation in GaAs waveguides"
G.
Leo and E. Rosencher
Optics Lett. 23, 1823 (1998):"
Optically amplified mid-IR parametric generation in AlGaAs waveguides"
125 E. Rosencher
C.R.A.S , t.11, Série IV,p. 615-625
(2000): "Towards all-semiconductor integrated optical parametric oscillator"
129 A. Mustellier,
R.Haidar, Ph.
Kupececk,E. Rosencher,
R. Triboulet, Ph. Lemasson and G. Mennerat
J. Appl. Phys. 91,
pp 2550-2553 (2002): " Difference frequency generation between 8 and 12 µm in
isotropic semiconductors"
137 R. Haidar, Ph. Kupecek, R. Triboulet, Ph.
Lemasson and E. Rosencher
Appl.
Phys. Lett. 82, 1167 (2003): " Difference frequency generation
quasi-phased
matched by Fresnel birefringence in isotropic semiconductor plates"
139 R. Haidar, Ph. Kupecek and E.
Rosencher
JOSA B 21, 1522
(2004): " Phase matching by total internal reflection in isotropic
semiconductor: theory and application to midinfrared generation in GaAs and
ZnSe "
140 R. Haidar, Ph.
Kupecek and E. Rosencher
Appl.
Phys. Lett. 83, 1506 (2003): " Non resonant quasi-phase matching in GaAs
plates by Fresnel birefringence"
142 R. Haidar, M. Baudrier, Ph.
Kupecek and E. Rosencher
Nature 432, 375
(2004): Random quasi phase matching in bulk polycrystalline isotropic
semiconductors"
143 R. Haidar, Ph.
Kupecek,
E. Rosencher, R. Triboulet and Ph. Lemasson
Opto-electronics Review
11 (2), 155-160 (2003) : “New mid-infrared optical sources based on isotropic
semiconductors (GaAs and ZnSe) using total internal reflection quasi-phase
matching »
144 MustellierE. Rosencher,A. Godard, M. Baudrier, M.
Lefebvre, G. Mennerat , Ph. Kupecek,, Ph. Lemasson
Appl. Phys. Lett. 84,
4424-4426 (2004): " Difference frequency generation in diffusion bonded ZnSe
wafers"
148 M. Raybaut,
A. Godard, R. Haïdar, M. Lefebvre, Ph. Kuoecek and E. Rosencher
Optics Letters, 31, 122 (2006)
: » Generation of mid-infrared
radiation by self –differency mixing in chromium doped zinc selenide”
156 L. Nevou, M. Tchernycheva, F.
Julien, M. Raybaud, A. Godard, E. Rosencher, F. Guillot and E. Monroy
Appl. Phys. Lett. (submitted) : « Intersubband
resonant enhancement of second-harmonic generation in GaN/AlN quantum wells »
Physique des
Oscillateurs Paramétriques Optiques
123 A.K. Mohamed , J.A.
Pruvost., I. Ribet., M. Lefebvre and E. Rosencher
IEEE J. Quantum Electr.QE 37, 290-295
(2001) : « Laser diode injected intracavity doubled Ti:sapphire laser for
tunable UV sources »
124 B. Scherrer, I. Ribet, A. Godard, E. Rosencher and M. Lefebvre
JOSA B 17, 1716-1729 ( 2000): : « Dual cavity doubly
resonant optical parametric oscillator: demonstration of pulsed single-mode
operation »
127
B. Scherrer, I. Ribet, A. Godard, E.
Rosencher, M. Lefebvre
C. R. Acad.
Sci. Paris, t. 1, Série IV, 633-638 (2000): "Optical parametric oscillator for
flow diagnostics"
128 E. Rosencher and C. Fabre
JOSA B 19,
1107-1116 ( 2002): "Oscillation characteristics of continuous wave optical
parametric oscillators: beyond the mean field approximation"
130
I. Ribet, C. Drag, M.
Jeandron, M. Lefebvre and E. Rosencher
Applied
Physics B 73, 195-200 (2001):"
Nanosecond single mode dual cavity
doubly resonant optical parametric oscillator: theory and experiment"
133 I. Ribet, C. Drag, M. Lefebvre and E. Rosencher
Optics Letters
27, 255 (2002) " Widely tunable single-frequency pulsed optical parametric
oscillator”
134 R. Haidar, N. Forget and E. Rosencher
IEEE J.
Quantum Electron. JQE 39, 569-576 (2003): " Optical parametric oscillations in
semiconductor microcavities: a theoretical approach"
135
C. Drag, A. Desormeaux, M. Lefebvre and E. Rosencher
Optics Letters
27, 1238 ( 2002)
: " Entangled cavity optical
parametric oscillator for mid-infrared pulsed single-longitudinal-mode operation
136 A. Mohamed, A. Mustellier and E. Rosencher
Optics Letter
27, 1457 (2002): " Tunable ultraviolet intracavity frequency tripled of Ti: Sa
laser"
145 A. Desormeaux, M. Lefebvre, E. Rosencher, J.-P. Huignard
Optics
Letters, 29 , 2887 (2004) :
”Mid-infrared
high-resolution absorption spectroscopy by use of a semimonolithic
entangled-cavity optical parametric oscillator”
147 A. Godard and E. Rosencher
IEEE
J. Quantum Electr. JQE 40, 1527-1531 (2004) : “Energy yield of pulsed optical
parametric oscillators: beyond the mean field approximation”
149 N. Forget,
S. Bahbah, C. Drag,F. Brateneker, M. Lefebvre and E. Rosencher
Optics Letters, 31, 972
(2006) : “Actively modelocked optical parametric oscillator”
150
A. Godard, M. Raybaut, O. Lambert, J-P. Faleni, M. Lefebvre, and E. Rosencher
J. Opt. Soc. Am. B 22,
1966-1978 (2005): “Cross resonant optical parametric oscillators: study and
application to difference-frequency generation”
152
A. Godard and E. Rosencher
Applied Phys. B (en cours) : “Optimisation of pulsed optical parametric
oscillators”
Laser à
Semiconducteurs
110 J.C. Garcia, E. Rosencher,
Ph. Collot, N. Laurent, J.L. Guyaux, B. Vinter and J. Nagle
Appl. Phys. Lett. 71, 3752
(1997): “Epitaxially stacked lasers using Esaki junctions: a bipolar cascade
laser”
155 J.
Jaeck, R. Haidar, E. Rosencher, M. Caes, M. TauvyS. Collin, N. Bardou, J. L.
Pelouard, Ph. Lemasson
Optics Letters
(accepté 2006) : “Room temperature
electroluminescence in the mid-infrared (2 to 3 µm) from bulk chromium-doped
ZnSe”
Autres
1.
E. Rosencher :
R.A.I.R.O Automatique/System Analysis
and Control 11, 373 (1977). "Synthesis of double-indexed recursive
filters" (en Français).
2.
E. Rosencher and M. Clerget :
Ann. Télécomm. 34, 439 (1979). "Rational
approximation of filters" (en Français).
3.
J.F. Abramatic, F. Germain and
E. Rosencher :
I.E.E.E. Transactions ASSP 27, 445 (1979).
"Design of two dimensional separate denominator recursive
filters".
121 E. Rosencher, G. Froc, B. Attal-Tretout and V.
Michau
J. Phys. IV, Pr8-93 (2000) : « Analysis
of the photon return from a polychromatic laser sodium star »
122
E. Rosencher, G. Froc, B. Attal-Tretout
Optics Communications 178, 405 (2000) :
« Photon return from a polychromatic sodium star »
131 N. Dorval, J. Bonnet, J.P. Marque, E. Rosenche, S .
Chable, F. Rogier and P. Lasgorceix
J. Appl. Phys.
91, 4811-4817 (2002): " Velocity distribution in a stationary plasma thruster: a
Xe+ fluorescence study"
